Total Ionising Dose Effects on HFO2 and AL2O3 Gate Oxide SOI FinFET
Date of Submission
21st Nov 2024
General Information:
|
| Year Of Paper Submission : 2018-19 |
| Type of Applicant : Faculty |
| Selected Course : PhD |
| Department of Applicant : EXTC |
| Class of Applicant : Faculty |
Applicants Details:
|
| Applicant Name : Reena Sonkusare |
Guide Details:
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Paper Details:
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| Title of Paper : Total Ionising Dose Effects on HFO2 and AL2O3 Gate Oxide SOI FinFET |
| Type of Paper : Conference |
| Type of Publication : International |
| Date Of Conference / Journal / Book :
2000-01-01 |
| Conference_Type : IEEE |
| ISBN : 2289-2293 ISSN: 2320-2882 |
