Total Ionising Dose Effects on HFO2 and AL2O3 Gate Oxide SOI FinFET
Date of Submission
6th May 2024
General Information:
|
| Year Of Paper Submission : 2017-18 |
| Type of Applicant : Student |
| Selected Course : UG |
| Department of Applicant : EXTC |
| Class of Applicant : F.E. |
Applicants Details:
|
| Applicant Name : Ninad Chitnis |
Guide Details:
|
| Department of Guide No. 1 : Electronics & Telecommunication |
| Name of First Guide : Dr. Reena Sonkusare |
| Name of Second Guide : Dr. Surendra Rathod |
Paper Details:
|
| Title of Paper : Total Ionising Dose Effects on HFO2 and AL2O3 Gate Oxide SOI FinFET |
| Type of Paper : Journal |
| Type of Publication : International |
| Date Of Conference / Journal / Book :
2000-01-01 |
| Conference_Type : IEEE |
